| PART |
Description |
Maker |
| MX25L1605ZM MX25L1605ZMC-20 MX25L1605ZMC-20G MX25L |
16M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY 16M X 1 FLASH 2.7V PROM, DSO8
|
Macronix International Co., Ltd.
|
| MBM29F016A-90PFTN MBM29F016A-90PFTR MBM29F016A-12 |
FLASH MEMORY 16M (2M x 8) BIT
CMOS 16M (2M x 8) bit
|
Fujitsu Microelectronics
|
| UPD4616112F9-BC80-BC2 UPD4616112F9-BC90-BC2 |
16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT 1,600位CMOS移动指明内存100万字6
1M X 16 APPLICATION SPECIFIC SRAM, 90 ns, PBGA48 6 X 8 MM, FBGA-48
|
NEC, Corp.
Infineon Technologies AG
NEC Corp.
|
| TC58NS128ADC |
128-MBIT (16M x 8 BITS) CMOS NAND E PROM (16M BYTE SmartMedia )
|
TOSHIBA
|
| TH58V128DC |
128 Mbit (16M x 8bit) CMOS NAND E2PROM (16M BYTE SmartMedia鈩?
|
Toshiba Semiconductor
|
| HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG
Infineon Technologies AG
|
| MX25L1635D MX25L1635DM1I-12G MX25L1635DM2I-10G MX2 |
16M-BIT [x 1/x 2/x 4] CMOS SERIAL FLASH
|
Macronix International
|
| GM71V65403A GM71VS65403AL |
(GM71VS65403AL / GM71V65403A) 16M x 4-Bit CMOS DRAM
|
Hynix Semiconductor
|
| MX29LV017A MX29LV017AXBI-70 MX29LV017AXBI-90 MX29L |
16M-BIT [2Mx8] CMOS SINGLE VOLTAGE
|
http://
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MX29L1611G MX29L1611GPC-10 MX29L1611GPC-12 MX29L16 |
16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
|
MCNIX[Macronix International]
|
